DE375-102N12A rfpowermosfet v dss = 1000v i d25 = 12a r ds(on) 1.05 p dc = 940w symbol testconditions maximumratings v dss t j =25cto150c 1000 v v dgr t j =25cto150c;r gs =1m 1000 v v gs continuous 20 v v gsm transient 30 v i d25 t c =25c 12 a i dm t c =25c,pulsewidthlimitedbyt jm 72 a i ar t c =25c 12 a e ar t c =25c 30 mj dv/dt i s i dm ,di/dt ?100a/ s,v dd v dss , t j 150c,r g =0.2 5 v/ns i s =0 >200 v/ns p dc 940 w p dhs t c =25c derate3.7w/cabove25c 425 w p damb t c =25c 4.5 w r thjc 0.16 c/w r thjhs 0.35 c/w symbol testconditions characteristicvalues min. typ. max. v dss v gs =0v,i d =3ma 1000 v v gs(th) v ds =v gs ,i d =250a 4.0 4.7 5.5 v i gss v gs =20v dc ,v ds =0 100 na i dss v ds =0.8v dss t j =25c v gs =0t j =125c 50 1 a ma r ds(on) v gs =15v,i d =0.5i d25 pulsetest,t 300 s,dutycycled 2% 1.05 g fs v ds =15v,i d =0.5i d25 ,pulsetest 6.7 8.0 s t j 55 +175 c t jm 175 c t stg 55 +175 c t l 1.6mm(0.063in)fromcasefor10s 300 c weight 3 g t j =25cunlessotherwisespecified features ? isolatedsubstrate ? highisolationvoltage(>2500v) ? excellentthermaltransfer ? increasedtemperatureandpower cyclingcapability ? ixysadvancedlowq g process ? lowgatechargeandcapacitances ? easiertodrive ? fasterswitching ? lowr ds(on) ? verylowinsertioninductance(<2nh) ? noberylliumoxide(beo)orotherhaz ardousmaterials advantages ? optimizedforrfandhighspeed switchingatfrequenciesto50mhz ? easytomountnoinsulatorsneeded ? highpowerdensity nchannelenhancementmode lowq g andr g highdv/dt nanosecondswitching 50mhzmaximumfrequency drain sg1 sg2 gate sd1 sd2
DE375-102N12A rfpowermosfet symbol testconditions characteristicvalues min. typ. max. r g 0.3 c iss 2500 pf c oss v gs =0v,v ds =0.8v dss(max) , f=1mhz 110 pf c rss 25 pf c stray backmetaltoanypin 33 pf t d(on) 5 ns t on v gs =15v,v ds =0.8v dss i d =0.5i dm r g =0.2 (external) 3 ns t d(off) 5 ns t off 8 ns q g(on) 77 nc q gs v gs =10v,v ds =0.5v dss i d =0.5i d25 16 nc q gd 42 nc ( t j =25cunlessotherwisespecified ) sourcedraindiode characteristicvalues ( t j =25cunlessotherwisespecified ) symbol testconditions min. typ. max. i s v gs =0v 12 a i sm repetitive;pulsewidthlimitedbyt jm 72 a v sd 1.5 v t rr 200 ns i f =i s ,v gs =0v, pulsetest,t 300 s,dutycycle 2% q rm i f =i s ,di/dt=100a/ s, v r =100v 0.6 c i rm 7 a ixysrfreservestherighttochangelimits,testc onditionsanddimensions. ixysrfmosfetsarecoveredbyoneormoreofthef ollowingu.s.patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5 ,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5 ,486,715 5,381,025 5,640,045 fordetaileddevicemountingandinstallationinstr uctions,seethe device installation & mounting instructions technical noteontheixysrfwebsiteat; http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_ series_mosfet_installation_instructions.pdf caution:operationatorabovethemaximumratings valuesmayimpactdevicereliabilityorcauseperma nentdamagetothedevice. informationinthisdocumentisbelievedtobeaccu rateandreliable . ixysrfreservestherighttomakechangestoinform ationpub lishedinthisdocumentatanytimeandwithoutnot ice.
DE375-102N12A rfpowermosfet v ds vs. capacitance 1 10 100 1000 10000 0 100 200 300 400 500 600 700 800 v ds voltage(v) capacitance(pf) extendedoutputcharacteristics 0 5 10 15 20 25 30 35 40 45 0 20 40 60 80 100 120 v ds ,draintosourcevoltage(v) i d ,draincurrnet(a) typicaltransfercharacteristics v ds =100v,pw=40us 0 5 10 15 20 25 30 35 40 45 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 v gs ,gatetosourcevoltage(v) i d ,draincurrent(a) gatechargevs.gatetosourcevoltage v ds =500v,i d =6a 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 gatecharge(nc) gatetosourcevoltage(v) typicaloutputcharacteristics 0 5 10 15 20 25 30 0 20 40 60 80 100 120 v ds ,draintosourcevoltage(v) i d ,draincurrnet(a) fig.1 fig.2 fig.3 top 10v 9v 8v 7v 6.5v bottom 6v top 10v 9v 8v 7v 6.5v bottom 6v fig.5 fig.4 c iss c oss c rss
DE375-102N12A rfpowermosfet fig.6packagedrawing source source source source gate drain
DE375-102N12A rfpowermosfet 102n12adeseriesspicemodel thedeseriesspicemodelisillustratedinfigure 7.themodelisanexpansionofthe spicelevel3mosfetmodel.itincludesthestrayi nductivetermsl g ,l s andl d .rdisthe r ds(on) ofthedevice,rdsistheresistiveleakageterm. theoutputcapacitance,c oss ,and reversetransfercapacitance,c rss aremodeledwithreversedbiaseddiodes.thisprov ides avaractortyperesponsenecessaryforahighpower devicemodel.theturnondelayand theturnoffdelayareadjustedviaronandroff. figure7deseriesspicemodel thisspicemodelmaybedownloadedasatextfilef romtheixysrfwebsiteat http://www.ixysrf.com/products/switch_mode.html http://www.ixysrf.com/spice/de375102n12a.html netlist: .subckt102n12a102030 *terminals:dgs *1000volt12amp0.95ohmnchannelpowermos fet *rev.a010902 m11233dmosl=1uw=1u ron560.3 don62d1 rof57.1 dof27d1 d1crs28d2 d2crs18d2 cgs232.5n rd410.95 dcos31d3 rds135.0meg ls330.5n ld1041n lg2051n .modeldmosnmos(level=3vto=3.0kp=3.8) .modeld1d(is=.5fcjo=1pbv=100m=.5vj=.6tt=1n) .modeld2d(is=.5fcjo=400pbv=1000m=.4vj=.6tt= 400nrs=10m) .modeld3d(is=.5fcjo=900pbv=1000m=.3vj=.4tt= 400nrs=10m) .ends an ixys company 2401researchblvd.,suite108 fortcollins,cousa80526 9704931901fax:9704931903 email:sales@ixyscolorado.com web:http://www.ixyscolorado.com doc#92000249rev6 ?2009ixysrf
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